Investigation of GaAs/(Al,Ga)As multiple quantum wells grown on Ge and Si substrates by molecular-beam epitaxy - Reddy, U. K.; Houdré, R.; Munns, G.; Ji, G.; Morkoç, H.; Longerbone, M.; Davis, L.; Gu, B. P.; Otsuka, N. (American Institute of Physics (AIP), 1987)
http://dx.doi.org/10.1063/1.339832
Keywords: U