APA (7th ed.) Citation

Noge, H., Kano, H., Hashimoto, M., & Igarashi, I. (1988). Antiphase domains in GaAs grown on a (001)-oriented Si substrate by molecular-beam epitaxy. American Institute of Physics (AIP).

Chicago Style (17th ed.) Citation

Noge, H., H. Kano, M. Hashimoto, and I. Igarashi. Antiphase Domains in GaAs Grown on a (001)-oriented Si Substrate by Molecular-beam Epitaxy. [S.l.]: American Institute of Physics (AIP), 1988.

MLA (9th ed.) Citation

Noge, H., et al. Antiphase Domains in GaAs Grown on a (001)-oriented Si Substrate by Molecular-beam Epitaxy. American Institute of Physics (AIP), 1988.