Evidence for asymmetric well shapes in post-growth modified GaAs/AlGaAs quantum wells
Koteles, Emil S. ; Elman, B. ; Armiento, C. A. ; Melman, P. ; Chi, J. Y. ; Holmstrom, R. J. ; Powers, J. ; Owens, D. ; Charbonneau, S. ; Thewalt, M. L. W.
[S.l.] : American Institute of Physics (AIP)
Published 1989
[S.l.] : American Institute of Physics (AIP)
Published 1989
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Evidence has been obtained indicating asymmetry in the shapes of as-grown symmetric coupled double GaAs/AlGaAs quantum wells (CDQW) which were modified by capping with silicon dioxide followed by rapid thermal annealing. The sensitivity of the optical properties of CDQWs to perturbations, in contrast to single quantum wells, permitted this observation. The asymmetry may result from the thermally driven unidirectional diffusion of vacancies generated near the surface which enhances intermixing of barrier and well materials in the quantum wells.
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| Type of Medium: |
Electronic Resource
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| URL: |