Reverse-bias current reduction in low-temperature-annealed silicon pn junctions by ultraclean ion-implantation technology - Nitta, T.; Ohmi, T.; Ishihara, Y.; Okita, A.; Shibata, T.; Sugiura, J.; Ohwada, N. (American Institute of Physics (AIP), 1990)
http://dx.doi.org/10.1063/1.344529
Keywords: U