Growth temperature dependence of EL2 concentration in GaAs grown by metalorganic vapor-phase epitaxy using tertiarybutylarsine - Okabe, T.; Kikkawa, T.; Tanaka, H.; Takikawa, M.; Komeno, J. (American Institute of Physics (AIP), 1990)
http://dx.doi.org/10.1063/1.346243
Keywords: U