APA (7th ed.) Citation

Okabe, T., Kikkawa, T., Tanaka, H., Takikawa, M., & Komeno, J. (1990). Growth temperature dependence of EL2 concentration in GaAs grown by metalorganic vapor-phase epitaxy using tertiarybutylarsine. American Institute of Physics (AIP).

Chicago Style (17th ed.) Citation

Okabe, T., T. Kikkawa, H. Tanaka, M. Takikawa, and J. Komeno. Growth Temperature Dependence of EL2 Concentration in GaAs Grown by Metalorganic Vapor-phase Epitaxy Using Tertiarybutylarsine. [S.l.]: American Institute of Physics (AIP), 1990.

MLA (9th ed.) Citation

Okabe, T., et al. Growth Temperature Dependence of EL2 Concentration in GaAs Grown by Metalorganic Vapor-phase Epitaxy Using Tertiarybutylarsine. American Institute of Physics (AIP), 1990.