Resonant level lifetime in GaAs-AlAs double-barrier structures including Γ-X mixing
Zheng, T. F. ; Cai, W. ; Hu, P. ; Lax, M. ; Shum, Kai ; Alfano, R. R.
[S.l.] : American Institute of Physics (AIP)
Published 1991
[S.l.] : American Institute of Physics (AIP)
Published 1991
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
A quantitative model for calculation of the lifetime of quasibound states, including the Γ-X transfer, in a AlAs-GaAs-AlAs double-barrier structure is presented. When device is designed that a Γ-like energy level approaches to an X-like energy level, anticrossing of the Γ-X transition occurs and the lifetime of the state can be several orders larger than that of a pure Γ system.
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| Type of Medium: |
Electronic Resource
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| URL: |