Reactive metal overlayer formation on high-temperature superconductors at 20 K

1089-7550

AIP Digital Archive

Physics

Photoemission results demonstrate that atom deposition of Ti, Cr, and Cu at 20 K on the high-temperature superconductors (HTSs) dramatically reduces interfacial reaction relative to 300 K growth but does not completely eliminate it. Thin Ti-O or Cr-O layers are formed during atom deposition of ∼2 A(ring) of Ti or Cr on YBa2Cu3O7 or Bi2Sr2Ca1Cu2O8 because oxygen is withdrawn from the Bi-O and/or Cu-O layers. Interfacial reactions are diffusion limited at 20 K, and metal overlayers nucleate on the reacted layers. These metal layers are more uniform than those grown at 300 K because clustering is suppressed. There is no additional disruption for Cr/HTS interfaces when warmed to 300 K, but increased disruption is evident for Ti/HTS interfaces. The differences reflect the stabilities of Cr and Ti in contact with their own interfacial oxide. Cu atom deposition on Bi2Sr2Ca1Cu208(100) at 20 K also leads to much less disruption than observed for deposition at 300 K.

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