Zero-dimensional states in submicron double-barrier heterostructures laterally constricted by hydrogen plasma isolation
Van Hove, M. ; Pereira, R. ; De Raedt, W. ; Borghs, G. ; Jonckheere, R. ; Sala, C. ; Magnus, W. ; Schoenmaker, W. ; Van Rossum, M.
[S.l.] : American Institute of Physics (AIP)
Published 1992
[S.l.] : American Institute of Physics (AIP)
Published 1992
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
The lateral dimensions of resonant tunneling AlGaAs-GaAs double barrier heterostructures have been restricted by hydrogen plasma exposure. Ohmic contacts to the submicron diodes have been made by solid phase epitaxial growth of Ge on GaAs. The current-voltage characteristics show a fine structure splitting that is inversely proportional to the lateral size of the diode. The results are interpreted as resonant tunneling through zero-dimensional states in the quantum box confined by the AlGaAs barriers and a harmonic lateral confining potential.
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| Type of Medium: |
Electronic Resource
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| URL: |
| _version_ | 1798289660166799362 |
|---|---|
| autor | Van Hove, M. Pereira, R. De Raedt, W. Borghs, G. Jonckheere, R. Sala, C. Magnus, W. Schoenmaker, W. Van Rossum, M. |
| autorsonst | Van Hove, M. Pereira, R. De Raedt, W. Borghs, G. Jonckheere, R. Sala, C. Magnus, W. Schoenmaker, W. Van Rossum, M. |
| book_url | http://dx.doi.org/10.1063/1.352151 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ21861649X |
| issn | 1089-7550 |
| journal_name | Journal of Applied Physics |
| materialart | 1 |
| notes | The lateral dimensions of resonant tunneling AlGaAs-GaAs double barrier heterostructures have been restricted by hydrogen plasma exposure. Ohmic contacts to the submicron diodes have been made by solid phase epitaxial growth of Ge on GaAs. The current-voltage characteristics show a fine structure splitting that is inversely proportional to the lateral size of the diode. The results are interpreted as resonant tunneling through zero-dimensional states in the quantum box confined by the AlGaAs barriers and a harmonic lateral confining potential. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1992 |
| publikationsjahr_facette | 1992 |
| publikationsjahr_intervall | 8009:1990-1994 |
| publikationsjahr_sort | 1992 |
| publikationsort | [S.l.] |
| publisher | American Institute of Physics (AIP) |
| reference | 72 (1992), S. 158-160 |
| search_space | articles |
| shingle_author_1 | Van Hove, M. Pereira, R. De Raedt, W. Borghs, G. Jonckheere, R. Sala, C. Magnus, W. Schoenmaker, W. Van Rossum, M. |
| shingle_author_2 | Van Hove, M. Pereira, R. De Raedt, W. Borghs, G. Jonckheere, R. Sala, C. Magnus, W. Schoenmaker, W. Van Rossum, M. |
| shingle_author_3 | Van Hove, M. Pereira, R. De Raedt, W. Borghs, G. Jonckheere, R. Sala, C. Magnus, W. Schoenmaker, W. Van Rossum, M. |
| shingle_author_4 | Van Hove, M. Pereira, R. De Raedt, W. Borghs, G. Jonckheere, R. Sala, C. Magnus, W. Schoenmaker, W. Van Rossum, M. |
| shingle_catch_all_1 | Van Hove, M. Pereira, R. De Raedt, W. Borghs, G. Jonckheere, R. Sala, C. Magnus, W. Schoenmaker, W. Van Rossum, M. Zero-dimensional states in submicron double-barrier heterostructures laterally constricted by hydrogen plasma isolation The lateral dimensions of resonant tunneling AlGaAs-GaAs double barrier heterostructures have been restricted by hydrogen plasma exposure. Ohmic contacts to the submicron diodes have been made by solid phase epitaxial growth of Ge on GaAs. The current-voltage characteristics show a fine structure splitting that is inversely proportional to the lateral size of the diode. The results are interpreted as resonant tunneling through zero-dimensional states in the quantum box confined by the AlGaAs barriers and a harmonic lateral confining potential. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Van Hove, M. Pereira, R. De Raedt, W. Borghs, G. Jonckheere, R. Sala, C. Magnus, W. Schoenmaker, W. Van Rossum, M. Zero-dimensional states in submicron double-barrier heterostructures laterally constricted by hydrogen plasma isolation The lateral dimensions of resonant tunneling AlGaAs-GaAs double barrier heterostructures have been restricted by hydrogen plasma exposure. Ohmic contacts to the submicron diodes have been made by solid phase epitaxial growth of Ge on GaAs. The current-voltage characteristics show a fine structure splitting that is inversely proportional to the lateral size of the diode. The results are interpreted as resonant tunneling through zero-dimensional states in the quantum box confined by the AlGaAs barriers and a harmonic lateral confining potential. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Van Hove, M. Pereira, R. De Raedt, W. Borghs, G. Jonckheere, R. Sala, C. Magnus, W. Schoenmaker, W. Van Rossum, M. Zero-dimensional states in submicron double-barrier heterostructures laterally constricted by hydrogen plasma isolation The lateral dimensions of resonant tunneling AlGaAs-GaAs double barrier heterostructures have been restricted by hydrogen plasma exposure. Ohmic contacts to the submicron diodes have been made by solid phase epitaxial growth of Ge on GaAs. The current-voltage characteristics show a fine structure splitting that is inversely proportional to the lateral size of the diode. The results are interpreted as resonant tunneling through zero-dimensional states in the quantum box confined by the AlGaAs barriers and a harmonic lateral confining potential. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Van Hove, M. Pereira, R. De Raedt, W. Borghs, G. Jonckheere, R. Sala, C. Magnus, W. Schoenmaker, W. Van Rossum, M. Zero-dimensional states in submicron double-barrier heterostructures laterally constricted by hydrogen plasma isolation The lateral dimensions of resonant tunneling AlGaAs-GaAs double barrier heterostructures have been restricted by hydrogen plasma exposure. Ohmic contacts to the submicron diodes have been made by solid phase epitaxial growth of Ge on GaAs. The current-voltage characteristics show a fine structure splitting that is inversely proportional to the lateral size of the diode. The results are interpreted as resonant tunneling through zero-dimensional states in the quantum box confined by the AlGaAs barriers and a harmonic lateral confining potential. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_title_1 | Zero-dimensional states in submicron double-barrier heterostructures laterally constricted by hydrogen plasma isolation |
| shingle_title_2 | Zero-dimensional states in submicron double-barrier heterostructures laterally constricted by hydrogen plasma isolation |
| shingle_title_3 | Zero-dimensional states in submicron double-barrier heterostructures laterally constricted by hydrogen plasma isolation |
| shingle_title_4 | Zero-dimensional states in submicron double-barrier heterostructures laterally constricted by hydrogen plasma isolation |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:04:21.685Z |
| titel | Zero-dimensional states in submicron double-barrier heterostructures laterally constricted by hydrogen plasma isolation |
| titel_suche | Zero-dimensional states in submicron double-barrier heterostructures laterally constricted by hydrogen plasma isolation |
| topic | U |
| uid | nat_lic_papers_NLZ21861649X |