APA (7th ed.) Citation

Kim, C. H., Choe, B. D., Lim, H., Han, I. K., Lee, J. I., & Kang, K. N. (1992). Study of charge trapping instabilities in a silicon-nitride/indium-phosphide metal-insulator-semiconductor structure by the constant-capacitance method. American Institute of Physics (AIP).

Chicago Style (17th ed.) Citation

Kim, C. H., B. D. Choe, H. Lim, I. K. Han, J. I. Lee, and K. N. Kang. Study of Charge Trapping Instabilities in a Silicon-nitride/indium-phosphide Metal-insulator-semiconductor Structure by the Constant-capacitance Method. [S.l.]: American Institute of Physics (AIP), 1992.

MLA (9th ed.) Citation

Kim, C. H., et al. Study of Charge Trapping Instabilities in a Silicon-nitride/indium-phosphide Metal-insulator-semiconductor Structure by the Constant-capacitance Method. American Institute of Physics (AIP), 1992.