Transmission electron microscopy analysis of heavily As-doped, laser, and thermally annealed layers in silicon - Dokumaci, O.; Rousseau, P.; Luning, S.; Krishnamoorthy, V.; Jones, K. S.; Law, M. E. (American Institute of Physics (AIP), 1995)
http://dx.doi.org/10.1063/1.360271
Keywords: U