Photoluminescence of three phonon replicas of the bound exciton in undoped InGaP prepared by liquid phase epitaxy
Jiang, G. C. ; Chang, Y. ; Chang, L. B. ; Juang, Y. D. ; Lu, W. L. ; Lu, Luke S. ; Chang, K. H.
[S.l.] : American Institute of Physics (AIP)
Published 1995
[S.l.] : American Institute of Physics (AIP)
Published 1995
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Photoluminescence and Raman spectroscopies are employed to study undoped InGaP layers grown on GaAs (100) substrates at 750 °C by liquid phase epitaxy. There are four peaks in the photoluminescence spectrum in the energy range between 1.55 and 2.25 eV. Besides a bound exciton recombination, three longitudinal optical phonon replicas with one superimposed donor-acceptor emission are identified based upon their dependences of emission energies on temperature and excitation intensity. © 1995 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |