Ito, S., Nakamura, T., & Nishikawa, S. (1995). Pattern dependence in selective epitaxial Si1−xGex growth using reduced-pressure chemical vapor deposition. American Institute of Physics (AIP).
Chicago Style (17th ed.) CitationIto, S., T. Nakamura, and S. Nishikawa. Pattern Dependence in Selective Epitaxial Si1−xGex Growth Using Reduced-pressure Chemical Vapor Deposition. [S.l.]: American Institute of Physics (AIP), 1995.
MLA (9th ed.) CitationIto, S., et al. Pattern Dependence in Selective Epitaxial Si1−xGex Growth Using Reduced-pressure Chemical Vapor Deposition. American Institute of Physics (AIP), 1995.
Warning: These citations may not always be 100% accurate.