Spatial and temperature dependence of carrier recombination in an InGaAs/InP heterostructure
Monte, A. F. G. ; da Silva, S. W. ; Cruz, J. M. R. ; Morais, P. C.
[S.l.] : American Institute of Physics (AIP)
Published 1999
[S.l.] : American Institute of Physics (AIP)
Published 1999
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
The microluminescence surface scan technique has been used to investigate ambipolar carrier diffusion, photon diffusion, and photocarrier recombination in a nominally undoped InGaAs bulk layer lattice matched to InP grown by vapor levitation epitaxy. Measurements taken at different temperatures between 75 and 300 K are discussed in terms of the relative contribution of the two distinct mechanisms to the spectrally integrated luminescence intensity, namely, photon diffusion and photocarrier diffusion. © 1999 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |