The structural, chemical, and electronic properties of a stable GaS/GaAs interface
Cao, X. A. ; Hu, H. T. ; Dong, Y. ; Ding, X. M. ; Hou, X. Y.
[S.l.] : American Institute of Physics (AIP)
Published 1999
[S.l.] : American Institute of Physics (AIP)
Published 1999
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
A stable GaS passivating layer was deposited on GaAs using α-Ga2S3 powder as a single-source precursor. Both good crystal quality and clean GaS/GaAs interface were achieved. Electron-energy-loss spectra showed that the sulfide material has a band gap of 3.0 eV. The valence band discontinuity of the heterostructure was determined to be 1.9 eV from a series of ultraviolet photoelectron spectra with increasing deposition thickness. Al/GaS/GaAs metal-insulator-semiconductor structures exhibited typical high frequency capacitor versus voltage (C–V) behavior with very small loop hysteresis. The C–V curves showed no aging after 20 months. © 1999 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |