APA (7th ed.) Citation

Cui, J., Rusli, & Yoon, S. F. (2001). Effect of radio-frequency bias voltage on the optical and structural properties of hydrogenated amorphous silicon carbide. American Institute of Physics (AIP).

Chicago Style (17th ed.) Citation

Cui, J., Rusli, and S. F. Yoon. Effect of Radio-frequency Bias Voltage on the Optical and Structural Properties of Hydrogenated Amorphous Silicon Carbide. [S.l.]: American Institute of Physics (AIP), 2001.

MLA (9th ed.) Citation

Cui, J., et al. Effect of Radio-frequency Bias Voltage on the Optical and Structural Properties of Hydrogenated Amorphous Silicon Carbide. American Institute of Physics (AIP), 2001.