APA (7th ed.) Citation

Nishikawa, Y., Tsuburai, Y., Nozaki, C., Ohba, Y., Kokubun, Y., & Kinoshita, H. (1988). Zn doping characteristics for InGaAlP grown by low-pressure metalorganic chemical vapor deposition. American Institute of Physics (AIP).

Chicago Style (17th ed.) Citation

Nishikawa, Y., Y. Tsuburai, C. Nozaki, Y. Ohba, Y. Kokubun, and H. Kinoshita. Zn Doping Characteristics for InGaAlP Grown by Low-pressure Metalorganic Chemical Vapor Deposition. Woodbury, NY: American Institute of Physics (AIP), 1988.

MLA (9th ed.) Citation

Nishikawa, Y., et al. Zn Doping Characteristics for InGaAlP Grown by Low-pressure Metalorganic Chemical Vapor Deposition. American Institute of Physics (AIP), 1988.