Strain-induced lateral confinement of excitons in GaAs-AlGaAs quantum well microstructures
Kash, K. ; Worlock, J. M. ; Sturge, M. D. ; Grabbe, P. ; Harbison, J. P. ; Scherer, A. ; Lin, P. S. D.
Woodbury, NY : American Institute of Physics (AIP)
Published 1988
Woodbury, NY : American Institute of Physics (AIP)
Published 1988
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
We report evidence for lateral confinement of excitons within a continuous two-dimensional GaAs-AlGaAs quantum well. The confinement to "wires'' within the well was produced by partially etching a pattern through the upper AlGaAs barrier. We propose a new mechanism, that of patterned strain, for lateral quantum confinement of carriers in semiconductor microstructures, to explain our results.
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| Type of Medium: |
Electronic Resource
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| URL: |