Jamison, K. D., Bensaoula, A., Ignatiev, A., Huang, C. F., & Chan, W. S. (1989). Epitaxial growth of InSb (111) on sapphire (0001). American Institute of Physics (AIP).
Chicago Style (17th ed.) CitationJamison, K. D., A. Bensaoula, A. Ignatiev, C. F. Huang, and W. S. Chan. Epitaxial Growth of InSb (111) on Sapphire (0001). Woodbury, NY: American Institute of Physics (AIP), 1989.
MLA (9th ed.) CitationJamison, K. D., et al. Epitaxial Growth of InSb (111) on Sapphire (0001). American Institute of Physics (AIP), 1989.
Warning: These citations may not always be 100% accurate.