Submilliampere threshold current pseudomorphic InGaAs/AlGaAs buried-heterostructure quantum well lasers grown by molecular beam epitaxy
Eng, L. E. ; Chen, T. R. ; Sanders, S. ; Zhuang, Y. H. ; Zhao, B. ; Yariv, A. ; Morkoç, H.
Woodbury, NY : American Institute of Physics (AIP)
Published 1989
Woodbury, NY : American Institute of Physics (AIP)
Published 1989
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
We report on low threshold current strained InGaAs/AlGaAs single quantum well lasers grown by molecular beam epitaxy. Broad-area threshold current densities of 114 A/cm2 at 990 nm were measured for 1540-μm-long lasers. Threshold currents of 2.4 mA at 950 nm were obtained for an uncoated buried-heterostructure device with a 2-μm-wide stripe and 425-μm-long cavity. With reflective coatings the best device showed 0.9 mA threshold current (L=225 μm). Preliminary modulation measurements show bandwidths up to 5.5 GHz limited by the detector response.
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| Type of Medium: |
Electronic Resource
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| URL: |