Eng, L. E., Chen, T. R., Sanders, S., Zhuang, Y. H., Zhao, B., Yariv, A., & MorkoƧ, H. (1989). Submilliampere threshold current pseudomorphic InGaAs/AlGaAs buried-heterostructure quantum well lasers grown by molecular beam epitaxy. American Institute of Physics (AIP).
Chicago Style (17th ed.) CitationEng, L. E., T. R. Chen, S. Sanders, Y. H. Zhuang, B. Zhao, A. Yariv, and H. MorkoƧ. Submilliampere Threshold Current Pseudomorphic InGaAs/AlGaAs Buried-heterostructure Quantum Well Lasers Grown by Molecular Beam Epitaxy. Woodbury, NY: American Institute of Physics (AIP), 1989.
MLA (9th ed.) CitationEng, L. E., et al. Submilliampere Threshold Current Pseudomorphic InGaAs/AlGaAs Buried-heterostructure Quantum Well Lasers Grown by Molecular Beam Epitaxy. American Institute of Physics (AIP), 1989.