Experimental determination of transparency current density and estimation of the threshold current of semiconductor quantum well lasers
Chen, T. R. ; Eng, L. E. ; Zhuang, Y. H. ; Yariv, A.
Woodbury, NY : American Institute of Physics (AIP)
Published 1990
Woodbury, NY : American Institute of Physics (AIP)
Published 1990
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
An experimental method for determining the transparency current density of semiconductor quantum well lasers is demonstrated in a strained-layer InGaAs/GaAs single quantum well laser system. The experimental results are then used as a practical guide to the study of ultralow threshold lasers. A threshold current as low as 0.75 mA is observed.
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| Type of Medium: |
Electronic Resource
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| URL: |