Clear energy level shift in ultranarrow InGaAs/InP quantum well wires fabricated by reverse mesa chemical etching - Notomi, M.; Naganuma, M.; Nishida, T.; Tamamura, T.; Iwamura, H.; Nojima, S.; Okamoto, M. (American Institute of Physics (AIP), 1991)
http://dx.doi.org/10.1063/1.104526
Keywords: U