Spectral modulation of luminescence of strained Si1−xGex/Si quantum wells in a vertical cavity with air/Si and Si/SiO2 interface mirrors
Fukatsu, S. ; Nayak, D. K. ; Shiraki, Y.
Woodbury, NY : American Institute of Physics (AIP)
Published 1994
Woodbury, NY : American Institute of Physics (AIP)
Published 1994
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Integration of strained Si1−xGex/Si quantum wells (QWs) in a vertical cavity is demonstrated on a Si substrate with a buried-oxide using gas source Si molecular beam epitaxy. Spontaneous emission from the SiGe QW is found to be spectrally coupled to the longitudinal modes of a vertical cavity with buried oxide/Si and top Si/air interface mirrors, which is in excellent agreement with separate reflectance measurements. In addition, clear oscillations were observed in photoluminescence excitation spectra for photon energies even above the Si band gap, demonstrating cavity modulation of the incident light absorption. © 1994 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |