Electron and hole mobility in tris(8-hydroxyquinolinolato-N1,O8) aluminum
Kepler, R. G. ; Beeson, P. M. ; Jacobs, S. J. ; Anderson, R. A. ; Sinclair, M. B. ; Valencia, V. S. ; Cahill, P. A.
Woodbury, NY : American Institute of Physics (AIP)
Published 1995
Woodbury, NY : American Institute of Physics (AIP)
Published 1995
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
We have measured the drift mobility of electrons and holes in thin, vapor-deposited films of tris(8-hydroxyquinolinolato-N1,O8) aluminum using a time of flight photoconductivity technique. The drift of mobility of both carriers is dispersive and strongly electric field and temperature dependent. At ambient temperature and an electric field of 4×105 V cm−1, the effective mobility of electrons and holes is 1.4×10−6 and 2×10−8 cm2 V−1 s−1, respectively, in a 400 nm thick sample. © 1995 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |