High quality Si1−x−yGexCy epitaxial layers grown on (100) Si by rapid thermal chemical vapor deposition using methylsilane - Mi, J.; Warren, P.; Letourneau, P.; Judelewicz, M.; Gailhanou, M.; Dutoit, M.; Dubois, C.; Dupuy, J. C. (American Institute of Physics (AIP), 1995)
http://dx.doi.org/10.1063/1.114686
Keywords: U