APA (7th ed.) Citation

Mi, J., Warren, P., Letourneau, P., Judelewicz, M., Gailhanou, M., Dutoit, M., . . . Dupuy, J. C. (1995). High quality Si1−x−yGexCy epitaxial layers grown on (100) Si by rapid thermal chemical vapor deposition using methylsilane. American Institute of Physics (AIP).

Chicago Style (17th ed.) Citation

Mi, J., P. Warren, P. Letourneau, M. Judelewicz, M. Gailhanou, M. Dutoit, C. Dubois, and J. C. Dupuy. High Quality Si1−x−yGexCy Epitaxial Layers Grown on (100) Si by Rapid Thermal Chemical Vapor Deposition Using Methylsilane. Woodbury, NY: American Institute of Physics (AIP), 1995.

MLA (9th ed.) Citation

Mi, J., et al. High Quality Si1−x−yGexCy Epitaxial Layers Grown on (100) Si by Rapid Thermal Chemical Vapor Deposition Using Methylsilane. American Institute of Physics (AIP), 1995.