Detection of hot electron current with scanning hot electron microscopy

Vázquez, F. ; Kobayashi, D. ; Kobayashi, I. ; Miyamoto, Y. ; Furuya, K. ; Maruyama, T. ; Watanabe, M. ; Asada, M.

Woodbury, NY : American Institute of Physics (AIP)
Published 1996
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Scanning hot electron microscopy (SHEM) has been proposed as an experimental technique which allows for detection of hot electrons emitted from a subsurface semiconductor structure, thus making it possible to obtain the spatial distribution of hot electrons in a device. Here we present the experimental evidence of SHEM operation. Hot electrons with energies of 3 eV are injected by means of a Si/CaF2/Au heterostructure and subsequently detected at the tip of a scanning tunneling microscope in the SHEM configuration. The measured hot electron current was approximately 4 pA for a tunnel current of 5 nA. These results, although still of a preliminary nature, show the potential of SHEM as a technique suitable for the visualization of electron wave effects in semiconductor structures. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL: