Detection of hot electron current with scanning hot electron microscopy
Vázquez, F. ; Kobayashi, D. ; Kobayashi, I. ; Miyamoto, Y. ; Furuya, K. ; Maruyama, T. ; Watanabe, M. ; Asada, M.
Woodbury, NY : American Institute of Physics (AIP)
Published 1996
Woodbury, NY : American Institute of Physics (AIP)
Published 1996
ISSN: |
1077-3118
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Source: |
AIP Digital Archive
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Topics: |
Physics
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Notes: |
Scanning hot electron microscopy (SHEM) has been proposed as an experimental technique which allows for detection of hot electrons emitted from a subsurface semiconductor structure, thus making it possible to obtain the spatial distribution of hot electrons in a device. Here we present the experimental evidence of SHEM operation. Hot electrons with energies of 3 eV are injected by means of a Si/CaF2/Au heterostructure and subsequently detected at the tip of a scanning tunneling microscope in the SHEM configuration. The measured hot electron current was approximately 4 pA for a tunnel current of 5 nA. These results, although still of a preliminary nature, show the potential of SHEM as a technique suitable for the visualization of electron wave effects in semiconductor structures. © 1996 American Institute of Physics.
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Type of Medium: |
Electronic Resource
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URL: |