Room-temperature normal-mode coupling in a semiconductor microcavity utilizing native-oxide AlAl/GaAs mirrors
Nelson, T. R. ; Prineas, J. P. ; Khitrova, G. ; Gibbs, H. M. ; Berger, J. D. ; Lindmark, E. K. ; Shin, J.-H. ; Shin, H.-E. ; Lee, Y.-H. ; Tayebati, P. ; Javniskis, L.
Woodbury, NY : American Institute of Physics (AIP)
Published 1996
Woodbury, NY : American Institute of Physics (AIP)
Published 1996
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
A GaAs/AlAs microcavity containing six InGaAs quantum wells was grown, and the sample was then etched via chemically-assisted ion-beam etching to form 50-μm-diam cylindrical mesas. The formation of native oxides, accomplished by baking the samples at 400 °C in the presence of a pressurized N2/H2O vapor line, lowered the refractive index of the AlAs layers to 1.5. The higher refractive index contrast more effectively confined the intracavity field, leading to well-resolved reflectivity dips with an exciton-polariton splitting of 6.72 nm=9.44 meV at room temperature. © 1996 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |