Structures and defects induced during annealing of sputtered near-equiatomic NiTi shape memory thin films
Gong, F. F. ; Shen, H. M. ; Wang, Y. N.
Woodbury, NY : American Institute of Physics (AIP)
Published 1996
Woodbury, NY : American Institute of Physics (AIP)
Published 1996
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Structures and defects induced during annealing were studied in free-standing NiTi thin films produced by rf magnetron sputtering. Ni4Ti3 precipitates coherent with the (B2) matrix do not affect the shape memory behavior of the thin films annealed at 550 °C for short times. With the further increase of the annealing time and/or temperature, less coherent Ni4Ti3 precipitates develop and hinder the shape memory behavior. The embrittlement of the annealed films probably results from grain–boundary precipitation, thermal etching, and stress gradients. © 1996 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |