7000 h continuous wave operation of multiple quantum well laser on Si at 50 °C
Yamada, T. ; Tachikawa, M. ; Sasaki, T. ; Mori, H. ; Kadota, Y.
Woodbury, NY : American Institute of Physics (AIP)
Published 1997
Woodbury, NY : American Institute of Physics (AIP)
Published 1997
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
A 1.55 μm multiple quantum well laser heteroepitaxially grown on Si substrate operates under the severe aging condition of the light output of 5 mW/facet at 50 °C. The laser has been operating for more than 7000 h. The threshold current and the slope efficiency of the laser on Si at 20 °C are 32 mA and 0.19 W/A, respectively. The maximum operation temperature is above 80 °C. © 1997 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |