The tunnel thin film electroluminescent device
Summers, C. J. ; Wagner, B. K. ; Tong, W.
Woodbury, NY : American Institute of Physics (AIP)
Published 1997
Woodbury, NY : American Institute of Physics (AIP)
Published 1997
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
A new electroluminescent device concept is proposed to achieve low voltage operation. The device is based on a lattice matched semiconductor/insulator/luminescent layer/insulator/semiconductor structure in which, under bias, electrons are injected from the semiconductor into the electroluminescent layer at high energy. This tunnel thin film electroluminescent device is integrable with silicon and suitable for use in very low voltage, high brightness electroluminescent displays. Preliminary results indicate operation as low as 15 V with a peak brightness of 22 fL at 24 V. © 1997 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |