GaInAsSb/AlGaAsSb multiple-quantum-well diode lasers grown by organometallic vapor phase epitaxy
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
A GaInAsSb/AlGaAsSb multiple-quantum-well diode laser structure consisting of Al0.6Ga0.4As0.05Sb0.95 cladding layers, Al0.3Ga0.7As0.02Sb0.98 confining layers, and four 15-nm-thick Ga0.87In0.13As0.12Sb0.88 quantum wells with 20-nm-thick Al0.3Ga0.7As0.02Sb0.98 barrier layers was grown by organometallic vapor phase epitaxy. These lasers, emitting at 2.1 μm, have exhibited pulsed threshold current densities as low as 1.2 kA/cm2. © 1997 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |