Enhancement of intersubband transition energies in GaAs quantum wells by Si delta doping of high concentration
Sasagawa, R. ; Sugawara, H. ; Ohno, Y. ; Nakajima, H. ; Tsujino, S.
Woodbury, NY : American Institute of Physics (AIP)
Published 1998
Woodbury, NY : American Institute of Physics (AIP)
Published 1998
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Intersubband light absorption measurements have been performed on a series of GaAs/AlAs quantum wells with heavy delta doping of Si atoms in the range 9.0×1011–6.5×1012 cm−2. The increase of intersubband transition energy by as much as 38 meV has been observed, and attributed to the deepening of the V-shaped potential by the Si layer and to the depolarization effects. © 1998 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |