Microstructural study of optically degraded ZnCdSe quantum wells
Tomiya, S. ; Noguchi, H. ; Sanaka, Y. ; Hino, T. ; Taniguchi, S. ; Ishibashi, A.
Woodbury, NY : American Institute of Physics (AIP)
Published 1999
Woodbury, NY : American Institute of Physics (AIP)
Published 1999
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
The defect structure of optically degraded ZnCdSe quantum wells was investigated using transmission electron microscopy. The defects were composed of the dislocation dipoles with a Burgers vector of b=−(a/2)[101] inclined at 45° to the (001) plane. The dislocation dipoles consist of two segments aligned along the [11¯0] direction and the [120] direction. The [11¯0] dipole segments lying in the (111¯) plane were developed by the recombination-enhanced dislocation glide process, while the [1¯2¯0] dipole segments lying in the (2¯11) plane were developed by the recombination-enhanced dislocation climb process. Both processes operate simultaneously. © 1999 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |