Interfacial conduction in silica gels containing nanocrystalline copper oxide

Das, D. ; Chakravorty, D.

Woodbury, NY : American Institute of Physics (AIP)
Published 2000
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Nanometer-sized copper particles have been grown within a gel derived glass in the system 60 CuO, 40 SiO2 (mole %). By heat treatment at temperatures in the range of 450–850 °C, copper oxide shells of thickness varying from 1.1 to 1.7 nm have been produced. DC resistivity measurements carried out over the temperature range of 30–300 °C show a drastically reduced activation energy as compared to that of a reference sample with the above composition. This is ascribed to the presence of an interfacial amorphous phase generated by the assembly of nanosized copper oxide particles. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL: