Kanzawa, Y., Saitoh, T., & Kubo, M. (2001). Thermal-annealing dependence of C-related atomic configuration in Si1−x−yGexCy crystals grown by ultra-high-vacuum chemical-vapor deposition. American Institute of Physics (AIP).
Chicago Style (17th ed.) CitationKanzawa, Y., T. Saitoh, and M. Kubo. Thermal-annealing Dependence of C-related Atomic Configuration in Si1−x−yGexCy Crystals Grown by Ultra-high-vacuum Chemical-vapor Deposition. Woodbury, NY: American Institute of Physics (AIP), 2001.
MLA (9th ed.) CitationKanzawa, Y., et al. Thermal-annealing Dependence of C-related Atomic Configuration in Si1−x−yGexCy Crystals Grown by Ultra-high-vacuum Chemical-vapor Deposition. American Institute of Physics (AIP), 2001.
Warning: These citations may not always be 100% accurate.