APA (7th ed.) Citation

Bousquet, V., Heffernan, J., Barnes, J., & Hooper, S. (2001). Effect of buffer layer preparation on GaN epilayers grown by gas-source molecular-beam epitaxy. American Institute of Physics (AIP).

Chicago Style (17th ed.) Citation

Bousquet, V., J. Heffernan, J. Barnes, and S. Hooper. Effect of Buffer Layer Preparation on GaN Epilayers Grown by Gas-source Molecular-beam Epitaxy. Woodbury, NY: American Institute of Physics (AIP), 2001.

MLA (9th ed.) Citation

Bousquet, V., et al. Effect of Buffer Layer Preparation on GaN Epilayers Grown by Gas-source Molecular-beam Epitaxy. American Institute of Physics (AIP), 2001.