Percolation model of the temperature dependence of resistance in doped manganese perovskites

Yuan, S. L. ; Li, Z. Y. ; Peng, G. ; Xiong, C. S. ; Xiong, Y. H. ; Tang, C. Q.

Woodbury, NY : American Institute of Physics (AIP)
Published 2001
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Assuming the sample to consist of ferromagnetic metallic (FMM) particles with a volume fraction (f ) randomly distributed over the paramagnetic insulating background, Monte Carlo simulations of electrical conductivity show excellent fits to the data measured in (La1−xYx)2/3Ca1/3MnO3 (x=0, 0.1 and 0.2). We find that the transition to metallic state occurs as the f reaches a percolation threshold, suggesting that the percolation of FMM domains is responsible for the observed insulator–metal transition. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL: