Fujiwara, M., Sasaki, M., & Akiba, M. (2002). Reduction method for low-frequency noise of GaAs junction field-effect transistor at a cryogenic temperature. American Institute of Physics (AIP).
Chicago Style (17th ed.) CitationFujiwara, M., M. Sasaki, and M. Akiba. Reduction Method for Low-frequency Noise of GaAs Junction Field-effect Transistor at a Cryogenic Temperature. Woodbury, NY: American Institute of Physics (AIP), 2002.
MLA (9th ed.) CitationFujiwara, M., et al. Reduction Method for Low-frequency Noise of GaAs Junction Field-effect Transistor at a Cryogenic Temperature. American Institute of Physics (AIP), 2002.
Warning: These citations may not always be 100% accurate.