An experimental study of instability in inorganic gate ISFETs - Cui, C.; Cheung, P.W.; Yee, S.; Muller, R. (Elsevier)
A series of experiments is presented in this paper, such as C - V characteristics of the electrolyte-insulator (SiO"2, Si"3N"4 and Al"2O"3)-semi-conductor (EIS) structure after various surface treatments, the capacitance drift rate versus gate stress voltage and the long-term test of the ISFET. The experimental results provide strong evidence to support the hypothesis that the slow time response of an ISFET to changes in pH is associated with the water related OH^- motion in insulators.
http://linkinghub.elsevier.com/retrieve/pii/0925-4005(90)80242-R
Keywords: V; ZN