A microstrip gas chamber on a silicon substrate - Angelini, A.; Bellazzini, R.; Bosisio, L.; Brez, A.; Massai, M.M.; Spandre, G.; Torquati, M.R. (Elsevier)
The operation of a microstrip gas chamber built on a silicon substrate is described. The insulation between the low-resistivity silicon and the anode-cathode structure is provided by a 2 μm thick thermal oxide layer. A gas gain of 10^4 has been measured at potential differences much lower than those usually needed with glass or quartz substrates. No surface charging or gain drift have been observed up to a measured flus of 5 x 10^5 particles/cm^2s. A device with such a thin dielectric between strips and back plane, makes a true two-dimensional readout possible.
http://linkinghub.elsevier.com/retrieve/pii/0168-9002(92)90236-W
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