Characterization of calcium implanted zirconia thin films - Schnell, J.P.; Croset, M.; Dieumegard, D.; Velasco, G.; Siejka, J. (Elsevier)
CaO stabilized zirconia (CSZ) is a well known oxygen conductor. Thin films of such material (1000 Å thick) have been obtained by Ca implantation in zirconia film followed by short annealing in air at moderate temperature. Studies of chemical composition and of Ca depth profile as a function of implantation dose and annealing temperature have been carried out using RBS and nuclear reactions. Measurements of dc conductivity and of ionic transport number have shown that initial electronic conductivity, associated to the defects introduced by ion implantation, has vanished after annealing at T ~ 200-300^oC and that ionic conductivity appears at temperatures 〉= ~ 400^oC. The implanted layers exhibit higher ionic conductivity than bulk ceramics of the same compositions.
http://linkinghub.elsevier.com/retrieve/pii/0167-5087(83)90937-7
Keywords: ZP; U