Extended Huckel cluster calculations of the L"2","3VV auger transition in silicon - Vidal, R.; Passeggi, M.C.G.; Goldberg, E.C.; Ferron, J. (Elsevier)
We report an independent-electron model calculation of the L"2","3VV Auger lineshape for an ideal Si(100) surface. Valence states were calculated for a cluster of Si atoms using the extended Huckel approximation. Atomic Auger matrix elements were evaluated using the Clementi wave functions for the Si atoms and a Coulombian wave for the continuum wave function. Fairly good agreement between theoretical results and experimental data is found when the presence of the free surface is taken into account.
http://linkinghub.elsevier.com/retrieve/pii/0039-6028(88)90600-0
Keywords: U