The effect of scaling on contact and interconnect properties with sputtered TiSi"2 metallization - Nahar, R.; Vyas, P. (Elsevier)
Investigations are made on contact and interconnect properties for scaling MOS transistor technology employing sputtered TiSi"2 metallization. The contact resistance of different contacts varying in size is measured for n^+ SiTiSi"2 shallow junction contacts using Kelvin test structures. It is found that the contact resistance almost doubles when the contact size is reduced from 5 to 2 microns. The results are compared with the conventional AlSi 2% contact metallization. The electrical and structural properties of n^+ poly SiTiSi"2 composite structures are studied as gate and interconnect metallization. The optimum conditions for doping thin poly-Si without affecting thin gate dielectric properties is given. The sheet resistance for the polycide structures is reduced to 2 ohm sq^-^1 from 40 ohm sq^-^1 for poly-Si structures for gate metallization. The thermal ability of structures is also examined and the results are discussed.
http://linkinghub.elsevier.com/retrieve/pii/0042-207X(93)90354-D
Keywords: ZL; U