APA (7th ed.) Citation

Fukami, A., Shoji, K., Nagano, T., Tokuyama, T., & Yang, C. Graded-bandgap SiGe bipolar transistor fabricated with germanium ion implantation. Elsevier.

Chicago Style (17th ed.) Citation

Fukami, A., K.-i Shoji, T. Nagano, T. Tokuyama, and C.Y Yang. Graded-bandgap SiGe Bipolar Transistor Fabricated with Germanium Ion Implantation. Amsterdam: Elsevier.

MLA (9th ed.) Citation

Fukami, A., et al. Graded-bandgap SiGe Bipolar Transistor Fabricated with Germanium Ion Implantation. Elsevier.