Graded-bandgap SiGe bipolar transistor fabricated with germanium ion implantation

Fukami, A. ; Shoji, K.-i. ; Nagano, T. ; Tokuyama, T. ; Yang, C.Y.

Amsterdam : Elsevier

ISSN:	0167-9317
Source:	Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
Topics:	Electrical Engineering, Measurement and Control Technology
Type of Medium:	Electronic Resource
URL:	http://linkinghub.elsevier.com/retrieve/pii/0167-9317(91)90173-B