Concerning growth of single crystal of the II-IV-V diamond-like compounds ZnSiP"2, CdSiP"2, ZnGeP"2, and CdSnP"2 and standard enthalpies of formation for ZnSiP"2 and CdSiP"2 - Buehler, E.; Wernick, J.H. (Elsevier)
Single crystals of the diamond-like tetragonal compounds ZnSiP"2, CdSiP"2 and CdSnP"2 were grown by vapor transport and by precipitation from liquid Sn. ZnGeP"2 crystals were grown directly from stoichiometric melts. The vapor transport experiments were carried out in the temperature range 800-1200^oC in unsupported thick-walled quartz ampoules. These materials exhibit dissociation pressures in excess of 8 atm at 1000 ^oC. Total equilibrium decomposition pressures were determined in the temperature range 1000-1500 ^oK. Standard enthalpies of formation were estimated for ZnSiP"2 and CdSiP"2 and compared to a theoretical estimate. The dissociation pressure for ZnGeP"2 increases rather sharply at the melting point (1025 ^oC). In contrast to ZnSiP"2 and CdSiP"2, the dissociation pressure is less than 4 atmospheres at 1000 ^oC and the gaseous decomposition product consists essentially of phosphorous in the temperature range 850-1150 ^oC.
http://linkinghub.elsevier.com/retrieve/pii/0022-0248(71)90260-0
Keywords: V; TE-TZ; U