Hot carrier stress effects in p-MOSFETs: physical effects relevant for circuit operation - Weber, W.; Brox, M.; Schwerin, A.v.; Thewes, R. (Elsevier)
This paper presents a discussion of the present status of understanding p-channel MOSFET degradation. Various published time dependences are reviewed. On the basis of the logarithmic time dependence we develop a model with the essential feature being a region of trapped charges spreading logarithmically over time in the direction of source. Evidences for and against this model are discussed in detail. Finally, applications in conjunction with lifetime extrapolations for digital operation and with the degradation of analog device parameters are presented.
http://linkinghub.elsevier.com/retrieve/pii/0167-9317(93)90168-5
Keywords: ZN