X-ray topography of growth step sources in LPE gallium arsenide - Bauser, E.; Hagen, W. (Elsevier)
X-ray topographs, taken of (001) oriented growth facets of GaAs layers grown by liquid phase epitaxy (LPE), were compared with interference-contrast micrographs of the same areas. The emergence points of dislocations coincide exactly with the apexes of very low-profile growth-step pyramids on the facet surface. The coincidence gives direct experimental evidence for dislocations acting as step sources on growth facets (Frank mechanism).
http://linkinghub.elsevier.com/retrieve/pii/0022-0248(80)90027-5
Keywords: V; TE-TZ; U